2. a) The intrinsic carrier concentration in GaAs at 300 K is 1.8 x 106 cm³. What is the carrier concentration in fm³³ at this temperature? b) The mobility of holes in GaAs at 300 K is 400 cm²/V-s. What is the mobility in m²/V-s?
2. a) The intrinsic carrier concentration in GaAs at 300 K is 1.8 x 106 cm³. What is the carrier concentration in fm³³ at this temperature? b) The mobility of holes in GaAs at 300 K is 400 cm²/V-s. What is the mobility in m²/V-s?
Physics for Scientists and Engineers with Modern Physics
10th Edition
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Raymond A. Serway, John W. Jewett
Chapter42: Molecules And Solids
Section: Chapter Questions
Problem 21P
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