2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.
2. Total current in a semiconductor is constant and is composed of electron drift current and hole diffusion current. The electron concentration is constant and equal to 5 x 1015 cm-3 Hole concentration is given by p(x) = 2 x 1015 exp (-÷) () cm³ for x >0 where L 10 µm. Hole diffusion coefficient is Dp = 12 cm?/s. Electron mobility is Un = 1000 cm?/V-s. Total current density is J= 4.5 A/cm?. (a) Calculate hole diffusion current density versus x (b) Electron current density versus x (c) Electric field versus x.
Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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