A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B

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A p-n heterojunction is formed though Semiconductor A intimately contacting with
Semiconductor B. The energy band diagrams for two semiconductors are shown in
Figure 2 on page 4. It is given that
=
ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV
If a small positive voltage is applied to Semiconductor A, and Semiconductor B is
grounded, explain how the potential barrier changes in comparison with the thermal
equilibrium condition.
The vacuum level
Хв
ХА
Есв
ECA-
EFB
EgB
EFA
EVA
EVB
Semiconductor A
Semiconductor B
Transcribed Image Text:A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B
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