c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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3c and 3d) Please helps with parts c and d only. Thank you!
Problem 3)-
a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a
photodetector, can have if it is to be sensitive to yellow light (600 nm).
b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2m W
cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of
EHPS generated per second.
c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary
wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this
wavelength in the visible?
d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?
Transcribed Image Text:Problem 3)- a) Determine the maximum value of the energy gap (bandgap) which a semiconductor, used as a photodetector, can have if it is to be sensitive to yellow light (600 nm). b) A photodetector whose area is 5×10-2 cm² is irradiated with yellow light whose intensity is 2m W cm2. Assuming that each photon generates one electron-hole pair (EHP), calculate the number of EHPS generated per second. c) From the known energy gap of the semiconductor GaAs (Eg = 1.42 eV), calculate the primary wavelength of photons emitted from this crystal as a result of electron-hole recombination. Is this wavelength in the visible? d) Will a silicon photodetector be sensitive to the radiation from a GaAs laser? Why?
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