Consider a gallium arsenide Hall device at T 300K. A Hall effect device has been fabricated with the following geometry: d = 0.01 cm, W = 0.05 cm, L = 0.5 cm. The measured current is 2.5 mA, and the applied voltage is 2.2 V. The magnitude of the magnetic field (pointing along the thickness direction) is |B| = 0.025 T, and the hall voltage is measured to be AVH = -4.5 mV. Find: (a) The semiconductor type (n or p-type) (b) The majority carrier concentration (c) The majority carrier mobility

Consider a gallium arsenide Hall device at T 300K. A Hall effect device has been fabricated with the following geometry: d = 0.01 cm, W = 0.05 cm, L = 0.5 cm. The measured current is 2.5 mA, and the applied voltage is 2.2 V. The magnitude of the magnetic field (pointing along the thickness direction) is |B| = 0.025 T, and the hall voltage is measured to be AVH = -4.5 mV. Find: (a) The semiconductor type (n or p-type) (b) The majority carrier concentration (c) The majority carrier mobility