Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in theconduction band is 1016 cm 3 and the hole concentration in the valance band is107 cm3. Assume that the electron and hole concentrations vary as T2.Calculate the intrinsic carrier concentration in silicon at T = 350 K.Note: energy gap of silicon = 1.12 evBoltzmann constant = 8.61x10-5 eV/K

we have np=Nc(T)Nh(T)e-EgkT hence at T = 300 k 1016×1017=Nc(300)Nh(300)e-Eg300k ---- (1) It is also…

Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm 3 and the hole concentration in the valance band is 1017 cm3. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T= 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K

Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm 3 and the hole concentration in the valance band is 1017 cm3. Assume that the electron and hole concentrations vary as T/2. Calculate the intrinsic carrier concentration in silicon at T= 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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