Describe the difference between the following: a.N-type and p-type semiconductor materials b.Donor and Acceptor impurities c.Majority and minority carriers
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Describe the difference between the following:
a.N-type and p-type semiconductor materials
b.Donor and Acceptor impurities
c.Majority and minority carriers
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- Describe the behaviour of the chemical potential relative to the top of the valence band when p-doped silicon is brought into contact with n-doped silicon. Select one: O A. Chemical potential decreases in n- type semiconductor and increases in p-type semiconductor O B. Chemical potential increases in n- type semiconductor and decreases in p-type semiconductor O C. Chemical potential remains unchanged O D. Chemical potential increases in both semiconductors O E. Chemical potential decreases in both semiconductorsThe main feature of photo-detectors made of high energy gap semiconductors is that: Select one: A. Their total current is extremely large. B. They have very small dark current. C. NON of the answers is correct. D. Their absorption coefficients are quite large. E. Thin samples are needed for such detectorsa. We discussed in class the "two conditions" that allow current to flow through a MOSFET, and "two conditions" that would not allow current to flow. Write down what these conditions are: b. Consider a n-channel MOSFET and a p-channel MOSFET. How would you connect these two transistors in order to create a basic CMOS Inverter, as discussed in class. c. Now consider a floating gate, containing electrons. Use Gauss' Law to explain whether or not inversion can occur in the channel if a positive gate voltage were to be applied d. Depending on whether or not current flows through the channel, what does this tell you about whether or not you have stored a "0" or a “1”? e. Use principles of Coulomb's Law to explain how you would remove electrons from the floating gate (i.e. to "flash" your flash memory device)
- Describe an extrinsic semiconductor material. What is the value or the electron concentration in an n-type material, and what is the value of the hole concentration in a p-type material?The main feature of photo-detectors made of high energy gap semiconductors is that: O a. They have very small dark current. O b. Their absorption coefficients are quite large. O c. A large number of photons is needed to boost their resulting current. O d. Thin samples are needed for such detectors O e. NON of the given choices is correct.exist is for valence electrons to "leap" into the conduction band with the Enoiteou Question 5 pplication of sufficient energy, legving a hole, or vacancy, behind in the valence band: Valence electron leaping into conduction band Conduction band valence band With sufficient thermal energy, these electron-hole pairs will form spontaneously. Af room temperature, however, this activity is slight. we may greatly enhance charge carrier formation by adding specific impurities to the semiconducting material. The energy states of atoms having different electron configurations do not precisely "blend" with the electron bands of the parent semiconductor crystal, causing additional energy levels to form. Some types of impurities will cause extra donor electrons to lurk just beneath the main conduction band of the crystal. These types of impurities are called pentavalent, because they have 5 valence electrons per atom rather than 4 as the parent substance typically possesses: Doped with a…
- Calculate the hole velocity when a voltage of 5 V is applied through a semiconductor bar as below: V + 0.05 cm 0.55 cm (Mobility of hole is given as 450 cm²/Vs) Select one: A. 14500 cm/s B. 4090 cm/s C. 4500 cm/s D. 13180 cm/s 0.3 cmExplain direct and indirect bandgap semiconductors. What is the limitation of indirect bandgap semiconductors?1. What happens to the thickness of the depletion region in a PN junction when an external voltage is applied to a forward bias diode? 2. When “P” and “N” type semiconductor pieces are brought into close contact, free electrons from the “N” piece will rush over to fill holes in the “P” piece, creating a zone on both sides of the contact region devoid of charge carriers. What is this zone called, and what are its electrical characteristics 3. Is this diode forward-biased or reverse biased? Show soultion please, thanks.
- A. Define the drift current in a semiconductor and give the mathematical expressions about both the current density of the electron drift current and the current density of the hole drift current. Define the diffusion current in a semiconductor and give the mathematical expressions about both the current density of the hole diffusion current and the current density of the electron diffusion current. B. P-N junction is given. Please: i) Draw the cross-section of this p-n junction and show the depletion region and the corresponding electrical field for an applied external voltage V # 0 volts if the positive terminal of the voltage source is connected to the n-side of the p-n junction and the negative terminal of the voltage source is connected to the p-side of this p-n junction. ii) Draw the cross-section of this p-n junction and show the depletion region and the corresponding electrical field for an applied external voltage V # 0 volts if the negative terminal of the voltage source is…a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone? d. Briefly explain how a Transistor can be used as a Switch and as an Amplifier? e. Briefly explain what is Machine Language? Also elaborate why Electronic devices don't understand to English Language? 2. Solve the Following (20) a. Calculate the transistor's Emitter current if it is driven by a small Base current of 7mA with a Collector current of 10mA b. Calculate the transistor's Collector current if it is driven by a small Base current of 1.96mA with a Emitter current of 100mA c. What is Rectifier? Also explain how a Bridge Rectifier works? Draw neat diagrams wherever necessary d. Explain why we need both…How does band theory explain that a solid is a conductor, a semiconductor, or an insulator of electric current? Match the following columns: 1. Driver a. Valencia band totally full very separate from driving 2. Semiconductor b. Fully filled Valencia band superimposed to the driving 3. Insulator c. Band of valencia totally full little separate from driving.
