Determine NA and acceptance angle in air for silica optical fiber given the cladding refractive index (1.5) and core refractive index (1.57).
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- A voltage reflection coefficient is measured as 0.75 , and the correspondingload voltage is 1 V. Determine (a) the incident voltage component at the load , (b) the reflected voltage component at the load , and (c) the current reflection coefficienthow much is the nominal current with which a LED diode with semiconductor material (wavelength)LED diode, with semiconductor material (wavelength) color RED.ÎNGİLİZCE TÜRKÇE RUSÇA An impurity like antimony (Sb) has five electrons in its outer shell. When there are Sb impurities in silicon,. Please choose one: ahiptir. a. A n-type material is created b. the crystal will be negatively charged C. none of the above D. both of the above 73:11 30.04.2021
- The reflection coefficient for a device is found to be 0.75. What will be the corresponding return loss of the device?Question: In a single phase half wave circuit with RL load, and a freewheeling diode across the load extinction angle B is less than TE. For a firing angle a, the SCR and freewheeling diode would conduct, respectively, for Option 1: TI-a, TT-B Option 2: B-a, 0º Option 3: T-a, B-TT Option 4: B-a, aConsider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
- Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?Figure shows the parabolic E versus k relationship in the conduction band for an electron in two particular semiconductor materials. Determine the effective mass (in unit of the free electron mass) of the two electrons. E (eV)4 0.5 0.05 A -0.08 0.08 k (Å-1)Draw the energy band diagram for GaAs when the GaAs is doped with Si on (i) Ga sites and (ii) on As sites.