Determine the base current (IB) show solution. choices. a. 23.44uA b. 23.44mA c. 24.32uA d. 24.32mA
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Determine the base current (IB) show solution.
choices.
a. 23.44uA
b. 23.44mA
c. 24.32uA
d. 24.32mA
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- For the semiconductor diode the "on" state will support a current in the direction of the in the symbol. Your answer The region of uncovered positive and negative ions is called the due to the diminution of free carriers in the region. (Two Words) Your answer What is the net flow of charge in the absence of an applied bias across a semiconductor diode? Your answerConsider a n-type silicon sample. If a power supply is connected between two ends of the silicon sample with 5 volts of voltage, 5 milliampers of current flows through the sample. If Na=3x1014 cm-3, N3=0, Dn=10 cm2/sec, Dp=20 cm2/sec, kt/q=D0.025 volts, obtain mobilkity if the sample area is two times its length in magnitude. (q=1.6x10-19 C, T=300 °K, kT=0.025 Ev, n=1010 cm-3) O a. 0.75 O b. 12.2 O c. 10.42 O d. 0.0675 O e. 20.85 O f. 0.45 O g. 8.5 O h. 885FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
- D1 Vsecondary Vfiltered D2 V1 sine Rload I 120 VAC @ 60 Hz D3 10:1 - D4 Figure 1: Bridge Rectifier Voltage Regulator Circuit The filter capacitor C, is recharged on every half-cycle of V secondary. Given: Rioad = 100 N VDiodes = 0.7 V Vi is given in RMS What is the minimum value of capacitor C, required such that Vrutered does not drop below 8 V?A. Explain the difference between charging current andfaradaic current. B. What is the purpose of waiting 1s after a voltage pulse before measuring current in sampled current voltammetry? C. Why is square wave voltammetry more sensitive than sampled current voltammetry?The characteristic of the UJT exhibits the following values: n = 0.575, RB1 = 10 k-ohms, Vv = 1.3 V, Iv =20mA, Ip=15UA. 125V B2 B, Determine the following: a. Determine the R82 (in kilo-ohms) of the UJT b. Determine the maximum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT c. Determine the minimum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT
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- The datasheet shown below for a group of commercial Zener diodes, according to the datasheet the typical voltage and leakage current of the Zener diode with model number 1N4732A are: * Tolerance- S% FAIRCHILD SEMICONDUCTOR Datasheet 1N4728A - 1N4758A Zener Diodes D0041 Glass case Electrical Characteristics 1,-25°C untess otherwise noted Vz (V) @ Iz (Note 1) Max. Zener Impedance Leakage Current Test Current Device Zz@lz ZzK @ IZK (mA) IR (HA) VR (V) Min. Тур. Мах. Iz (mA) (오) Izk (2) 3.315 3.42 1N4728A 3.3 3.465 76 10 400 1 100 1 1N4729A 3.6 3,78 69 10 400 100 1N4730A 3.705 4.085 3.9 4.095 64 9 400 50 1N4731A 4.3 4.515 58 400 10 1N4732A 4.465 4.7 4.935 53 500 1 10 1 1N4733A 4.845 5.1 5.355 49 550 10 1 1N4734A 5.32 5.6 5.88 45 600 10 1N4735A 5.89 6.2 6.51 41 2 700 1 10 3 1N4736A 6,46 6.8 7.14 37 3.5 700 1 10 1N4737A 7.125 7.5 7.875 34 4 700 0.5 10 b. 1V and 10uA O c. 4.7V and 10uA a. 4.465V and 10UA O d. 4.7V and 53mAA piece of silver wire has a resistance of 1 ohm. Determine the resistance of alead wire one-third the length and one-third the diameter if the resistivity of lead wire is 30 times that of silver. NOTE: Please explain where did you get the variables so I can understand them. Thank you1. SP=F002H; after PUSH BX, what is the value of SP?