Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?

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Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and
a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the
gold levels in silicon, doped with:
a) High concentration of donor atoms (with respect to the gold concentration)
b) High concentration of acceptor atoms?
c) What is the effect of gold atoms on the electron and hole concentrations?
Transcribed Image Text:Gold in silicon introduces an acceptor levels 0.54 eV below the conduction band edge, and a donor level 0.35 eV above the valence band. What will be the state of charge (or occupation) of the gold levels in silicon, doped with: a) High concentration of donor atoms (with respect to the gold concentration) b) High concentration of acceptor atoms? c) What is the effect of gold atoms on the electron and hole concentrations?
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