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- A tightly wound solenoid at 4.0 K is 50 cm long and is constructed from Nb wire of radius 1.5 mm. What maximum current can the solenoid carry if the wire is to remain superconducting?1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.In the transistor circuit on the sideMaximum values are given below. Normalmaximum VCC voltage of the BJT under conditionscalculate. Pd max = 07/100 W Vce max = 20V Ic max = 100mA Bdc = 150
- :/ The only parameter that affects the conduction in semiconductors is temperature O True False Conduction is independent of temperature Other:b) If the effective mass of electron is 0.4m0 having momentum 2.416×10−16 ????.?????then calculate energy of free electron in “electron volt” at the bottom of conduction bandCalculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA=1×1020/m³, Np= 1×1018, n; = 1×1015/m², &= 11.7, and the cross section area is lum. 68e-6, 2.Зе-19 О 6.8e-6, 2.3е-19 О 6.8e-6, 23e-19 O 68e-6, 23e-19 О
- For the FET transistors, why is the conductivity of the n-channel device is higher than that of the p-channel device?For the MOSFET amplifier Shown in figure below, the transistor parameters are VTN=0.8 V. Kn = 1 mA/V², and λ = 0. The circuit parameters are Vpp = 5 V. Rs = 1 KQ. Rp=4 KQ, R₁ = 225 KQ, and R₂ = 175 ko. Calculate the quiescent value of lpq VDD Ca Rin ww ww R₁ R₂ RD www Cc2 Rs www RL VoQ. 2. In a P-N junction diode, width of depletion layer is 0· 54m and potential barrier is 0-5V. Calculate the barrier electric field.
- In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cm4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.Semiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.