what would happen if we replaced the PVC rod with a semiconductor material? What mechanisms could we employ to inject energy into the bound charges in the semiconductor to force it to act like more of a conductor?
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A semiconductor is a material that has electrical conductivity that lies between a conductor and an insulator. These are widely used in electronics and electrical devices due to their ability to control the flow of electricity. Some examples are silicon and germanium.
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- A typical television remote control uses signal from an infrared LED. If the infrared light has a wavelength of 900 nm,(a). What is the energy band gap of the semiconductor in the LED? (b). What is the working principle of a semiconductor LED?Why does the addition of impurities to a conductor increase its resistivity, whereas the addition of impurities to a semiconductor generally decreases its resistivity?An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.
- Is it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain your points?Can a semiconductor be used to describe the distinction between a conductor and an insulator? Why not use a graph to support your arguments?The energy gaps Eg for the semiconductors silicon and germanium are, respectively, 1.12 and 0.67 eV. Which of the following statements, if any, are true? (a) Both substances have the same number density of charge carriers at room temperature. (b) At room temperature, germanium has a greater number density of charge carriers than silicon. (c) Both substances have a greater number density of conduction electrons than holes. (d) For each substance, the number density of electrons equals that of holes.
- Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…The plot of the E field with respect to x in a metal semiconductor junction at 300K is shown in the figure. The semiconductor is Si and E(0)=-2x10* V/cm and xo-0.2x10 cm. What is the semiconductor type and built in potential value. レEo) O a. n type 200 mV O b. n type 800 mv Oc p type 400 mV Od. p type 200 mV O e. n type 400 mV Of. p type 800 mvThe figure below is a part of the energy band diagram of a P-type semiconductor bar under equilibrium conditions (i.e., EF is constant). The valence band edge is sloped because doping is nonuniform along the bar. Assume that Ev rises with a slope of ∆ ⁄ L .
- l Airtel_HP 4G 7:19 PM © 74% < xyz imgtopdf_3008211907008.pdf.pdf |70 19. Consider the junction diode as ideal. The value of current flowing through AB is: 30. If 1k a ww +4 V -6V (a) O A (b) 10A (d) 10 A (c) 10A 20. The temperature dependence of resistances of Cu and undoped Si in the temperature range 300 - 400 K is best described by: (a) Linear increase for Cu, linear increase for Si. (a) a and B both are negative (b) a is positive and B is negative (c) a and B both are positive (d) a is negative and B is positive 25. If a battery of 6 V is connected terminals of 3 m long wire of thíckness and resistance of the or 100 2. The difference of potential be the two points separated by 50 cm 31 (b) Linear increase for Cu, exponential increase for Si. (c) Linear increase for Cu, exponential decrease for Si. (d) Linear decrease for Cu, linear decrease for Si. wire will be (a) 1 V (c) 2 V (b) 1.5 V (d) 3 V 21. When 5 V potential difference is applied across a wire of length 0.1 m, the drift…. Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If for an n-type semiconductor, the density of electrons is 10¹⁹ m-³ and their mobility is 1.6 m² (V-s), then the resistivity of the semiconductor 2 semiconductor (since, it is an n-type contribution of holes is ignored) is close toIs it feasible to describe the distinction between a conductor and an insulator using a semiconductor as an example? Why not use a graph to explain the arguments you're making?