Chapter 9.4, Problem 9.20P

In the upper half space, which is the empty space, I = 7 A current flows from the infinitely long wire along the y axis that intersects the z axis at the point C (0,0,10). Half-space z <0 is from a material with relative magnetic permeability µr = 5. 1. Write numerically the sum of the components (Hx + Hy + Hz) at the point A (-5, -5,0 +) of the magnetic field H [A / m] vector in terms of the given magnitudes (in the half space z> 0). 2.Write numerically the sum of the components (Hx + Hy + Hz) at the point A (-2, -4,0-) of the vector magnetic field H⃗[A / m] in terms of the given magnitudes (in the half-space z <0).

(a) What is the minimum donor doping required to convert silicon into a conductor based on the definitions in Table ? (b) What is the minimum acceptor doping required to convert silicon into a conductor?

In the upper half space, which is the empty space, I = 7 A current flows from the infinitely long wire along the y axis that intersects the z axis at the point C (0,0,10). Half-space z <0 is from a material with relative magnetic permeability µr = 5. Write numerically the sum of the components (Hx + Hy + Hz) at the point A (-5, -5,0 +) of the magnetic field H [A / m] vector in terms of the given magnitudes (in the half space z> 0).

A pure lead bar 10 cm long is maintained with one end at T = 300 K and the other at 310 K. The thermoelectric potential difference thus induced across the ends is 12.8 μV. Find the thermoelectric power for lead in this temperature range. (Note: Q varies nonlinearly with temperature, but over this narrow temperature range, you may use a linear approximation.)

Calculate the conductor surface electric field strength in kvrms/cm for the single-phase line in Problem 4.32 when the line is operating at 20 kv. Also calculate the ground-level electric field strength in kvrms/m directly under one conductor. Assume a line height of 10 m. Reference of problem 4.32 Calculate the capacitance-to-neutral in F/m and the admittance-to-neutral in S/km for the single-phase line in Problem 4.8. Neglect the effect of the earth plane. Reference of problem 4.8 A 60-Hz, single-phase two-wire overhead line has solid cylindrical copper conductors with a 1.5 cm diameter. The conductors are arranged ina horizontal configuration with 0.5 m spacing. Calculate in mH/krm (a) the inductance of each conductor due to internal flux linkages only, (b) the inductance of each conductor due to both internal and external flux link-ages, and (C) the total inductance of the line.

(a).   A Si bar 0.1 um long and 100 u,m2 in cross-sectional area is doped with1017 cm- 3 phosphorus. Find the current at 300 K with 10 V applied.Repeat for a Si bar 1 fjun long,?(b).   How long does it take an average electron to drift 1 |xm in pure Si at anelectric field of 100 V/cm? Repeat for 105 V/cm.?

Consider two straight wires lying on the x-axis, separated by a gap of 4 nm. The potential energy in the gap is about 3 eV higher than the energy of a conduction electron in either wire. What is the probability that a conduction electron in one wire arriving at the gap will pass through the gap into the other wire? [Hint: Assume that the gap is very wide. Then, a right-moving electron incoming on the gap partially passes through the left edge of the gap and loses its amplitude exponentially fast.  By the time it reaches the right edge, its reflection from the right edge can be neglected. Most of the particle wave at that point simply comes out of the gap and arries on in the second wire.]

A silicon-based MOSFET has a square gate 0.50 mm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.20 mm thick and has a dielectric constant of 4.5. (a) What is the equivalent gate – substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate – source potential difference of 1.0 V?

The distance d between two parallel conductive plates, each of which has a surface area of S, is the upper plate and the lower plate held at potential VO and 0, respectively. An inhomogeneous ohmic piece of thickness d, whose conductivity is given by the relation o(y)=o1+(o2-o1)yd and varying linearly from ơ1 to o2, is placed in the gap between the plates. According to this, a) Find the total resistance between the plates. b) Find the surface charge densities on the plates. c) Find the volumetric charge density between the plates and the total charg