Essential University Physics: Volume 2 (3rd Edition)
Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
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Chapter 37, Problem 68PP
To determine

The percentage of the incident solar energy absorbed by the silicon PV cell.

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An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.
K: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.
At 25°C, the electrical resistivity of an intrinsic Gallium Arsenide (GaAs) is 0.042 ohms.cm and the bandgap energy is 0.85 eV. Calculate the electrical conductivity of GaAs at 70°C. (k= 8.62 x10-5 eV/K)

Chapter 37 Solutions

Essential University Physics: Volume 2 (3rd Edition)

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