Modern Physics
3rd Edition
ISBN: 9781111794378
Author: Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher: Cengage Learning
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Chapter 10, Problem 23P
To determine
The approximate number of
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Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T=300 K:
N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The hole concentration?
In a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function
of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium
the value of the electric field at 160 jum will be:
O 1.935 V/cm
O 3.250 V/cm
O 5805 V/cm
O 55.56 V/cm
O 6.450 V/cm
Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium
arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and
that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces
arsenic to create holes. Use the following parameters for GaAs at T = 300 K:
N. = 4.7 × 1017 cm-³ and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant
over the temperature range.
The electron concentration ?
Chapter 10 Solutions
Modern Physics
Ch. 10 - Prob. 1QCh. 10 - Prob. 2QCh. 10 - Prob. 1PCh. 10 - Prob. 2PCh. 10 - Prob. 3PCh. 10 - Prob. 4PCh. 10 - Prob. 5PCh. 10 - Prob. 6PCh. 10 - Prob. 8PCh. 10 - The light from a heated atomic gas is shifted in...
Ch. 10 - Prob. 10PCh. 10 - To obtain a more clearly defined picture of the...Ch. 10 - Prob. 12PCh. 10 - Prob. 14PCh. 10 - Prob. 15PCh. 10 - Prob. 16PCh. 10 - Prob. 17PCh. 10 - Prob. 18PCh. 10 - Prob. 19PCh. 10 - Prob. 20PCh. 10 - Prob. 21PCh. 10 - Prob. 22PCh. 10 - Prob. 23PCh. 10 - Prob. 24PCh. 10 - Prob. 26P
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