Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
7th Edition
ISBN: 9780199339136
Author: Adel S. Sedra, Kenneth C. Smith
Publisher: Oxford University Press
expand_more
expand_more
format_list_bulleted
Question
Chapter 5, Problem 5.42P
To determine
The values of threshold voltage
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
For a common base configuration of BJT, if a = 0.94
and I, = 1.136 mA,
%3D
Value of the current I̟ will be,
a. 0.8274 mA
b. 2.3445 mA
c. 1.2085 mA
d. 0.07 mA
For a common base configuration of BJT, if a = 0.94
and
= 1.136 mA
Value of the current I, will be,
a. 2.3445 mA
b. 0.0725 mA
c. 1.2085 mA
d. 0.8274 mA
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true?
Select one:
a.
Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit
b.
Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction
c.
Each transistor on an integrated circuit is manufactured individually,one at a time
d.
An integrated circuit contains several layers
A certain npn silicon transistor has vBE=0.7 V for iB=0.1 mA at a temperature of 30°C. Sketch the input characteristic to scale at 30°C. What is the approximate value of vBE for iB = 0.1 mA at 180°C? (Use the rule of thumb that vBE is reduced in magnitude by 2 mV per degree increase in temperature.) Sketch the input characteristic to scale at 180°C.
Chapter 5 Solutions
Microelectronic Circuits (The Oxford Series in Electrical and Computer Engineering) 7th edition
Ch. 5.1 - Prob. 5.1ECh. 5.1 - Prob. 5.2ECh. 5.1 - Prob. D5.3ECh. 5.2 - Prob. 5.4ECh. 5.2 - Prob. 5.5ECh. 5.2 - Prob. 5.6ECh. 5.2 - Prob. 5.7ECh. 5.3 - Prob. D5.8ECh. 5.3 - Prob. D5.9ECh. 5.3 - Prob. D5.10E
Ch. 5.3 - Prob. 5.11ECh. 5.3 - Prob. 5.12ECh. 5.3 - Prob. D5.13ECh. 5.3 - Prob. D5.14ECh. 5.3 - Prob. 5.15ECh. 5.4 - Prob. 5.16ECh. 5.4 - Prob. 5.17ECh. 5 - Prob. 5.1PCh. 5 - Prob. 5.2PCh. 5 - Prob. 5.3PCh. 5 - Prob. 5.4PCh. 5 - Prob. D5.5PCh. 5 - Prob. 5.6PCh. 5 - Prob. D5.7PCh. 5 - Prob. 5.8PCh. 5 - Prob. 5.9PCh. 5 - Prob. 5.10PCh. 5 - Prob. 5.11PCh. 5 - Prob. 5.12PCh. 5 - Prob. 5.13PCh. 5 - Prob. 5.14PCh. 5 - Prob. 5.15PCh. 5 - Prob. 5.16PCh. 5 - Prob. 5.17PCh. 5 - Prob. 5.18PCh. 5 - Prob. 5.19PCh. 5 - Prob. D5.20PCh. 5 - Prob. 5.21PCh. 5 - Prob. 5.22PCh. 5 - Prob. 5.23PCh. 5 - Prob. 5.24PCh. 5 - Prob. 5.25PCh. 5 - Prob. 5.26PCh. 5 - Prob. 5.27PCh. 5 - Prob. 5.28PCh. 5 - Prob. 5.29PCh. 5 - Prob. 5.30PCh. 5 - Prob. 5.31PCh. 5 - Prob. D5.32PCh. 5 - Prob. D5.33PCh. 5 - Prob. 5.34PCh. 5 - Prob. 5.35PCh. 5 - Prob. D5.36PCh. 5 - Prob. 5.37PCh. 5 - Prob. 5.38PCh. 5 - Prob. 5.39PCh. 5 - Prob. 5.40PCh. 5 - Prob. 5.41PCh. 5 - Prob. 5.42PCh. 5 - Prob. 5.43PCh. 5 - Prob. D5.44PCh. 5 - Prob. 5.45PCh. 5 - Prob. D5.46PCh. 5 - Prob. 5.47PCh. 5 - Prob. D5.48PCh. 5 - Prob. D5.49PCh. 5 - Prob. D5.50PCh. 5 - Prob. D5.51PCh. 5 - Prob. 5.52PCh. 5 - Prob. D5.53PCh. 5 - Prob. 5.54PCh. 5 - Prob. 5.55PCh. 5 - Prob. 5.56PCh. 5 - Prob. 5.57PCh. 5 - Prob. 5.58PCh. 5 - Prob. 5.59PCh. 5 - Prob. 5.60PCh. 5 - Prob. 5.61PCh. 5 - Prob. 5.62PCh. 5 - Prob. 5.63PCh. 5 - Prob. 5.64PCh. 5 - Prob. 5.65PCh. 5 - Prob. 5.66PCh. 5 - Prob. 5.67P
Knowledge Booster
Similar questions
- Questions One Consider a uniformly doped silicon bipolar transistor at T=300K with a base doping of N, =5 x 10" cm' and collector doping of 2 x 10 cm. Assume the metallurgical base width is 70um. Calculate the change in neutral base width at the C-B voltage of 2V. (Hint Calculate depletion width to the base side at V = 2V and subtract for original length)arrow_forwardwhen varying from 100 N the load to which a load cell is subjected, with hysteresis equal to 0.5% and linearity equal to 1%, its output signal varied by 25mV. the sensitivity of this cell, in mV/N, of charge is equal to: a) 0.005b) 0.010c) 0.125d) 0.250e) 0.500arrow_forwardA MOSFET has a channel length of 1μm. What value of VDS will cause the electrons to reach saturation velocity? Repeat for a channel length of 0.1 μm. Repeat for L = 22 nmarrow_forward
- Electrical Engineering A uniformly doped silicon pnp bipolar transistor is to be designed with NĘ = 1019 cm³ and Nc = 1016 cm³. The metallurgical base width is 0.75 µm. Determine the minimum base doping so that the punch- through voltage is no less than 25 V.arrow_forwardA MOSFET is to be operated at Ip = 0.2 mA and is to have Im = 2mA/V. If K, = H„C02 = 200 µA/V². The 200 μΑ/V2. The W required (4) ratio isarrow_forwardAt room temperature a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is:arrow_forward
- Given: Single-stage, voltage-divider biased, common-emitter with 1. VCC = 14V 2. R1 = 32kohms 3. R2 = 7kohms 4. RC = 2kohms 5. RE = 1kohms 6. RS = 10ohms 7. RL = 2kohms 8. BDC = BAC = 135 9. ** 10.C, andC2 are coupling capacitors. 11.Cz is bypass capacitor 12. 13. Solve for: a. VB = Blank 1 V; b. VE = Blank 2 V ; c. IE = Blank 3 mA; d. VCE = Blank 4 V ; e. VC = Blank 5 V; f. re' = Blank 6 ohms ; g. Rin(base) = Blank 7 kohms ; h. Rin(tot) = Blank 8 kohms ; i. Voltage gain (Av) = Blank 9; j. Attenuation (Att) = Blank 10 ; k. Overall voltage gain (AVT) = Blank 11 ; %3Darrow_forwardDetermine the de current gain Bpc and the emitter current le for a transistor where IB = 50 µA and Ic = 3.65 mA. %3Darrow_forwardAn NMOS device has μn = 400 cm2/V·s. Whatis the cutoff frequency for L = 1 μm if the transistor is biased at 1 V above threshold? What wouldbe the cutoff frequency of a similar PMOS deviceif μp = 0.4 μn? (b) Repeat for L = 0.1 μmarrow_forward
- An n-channel silicon MOSFET has the following parameters: W = 6 µm, L = 1.5 µm, and tox = 8 nm. When the transistor is biased in the saturation region, the drain current is Ipsat = 0.132 mA at 1.25 V. Determine the electron mobility and the VGS 1.0 V and Ipsat 0.295 mA at VGS threshold voltage.arrow_forwardQ1) Answer True or False for the following: 1- Field-effect transistors are Bipolar devices. 2- A depletion MOSFET (D-MOSFET) can operate with a zero, positive, or negative gate-to source voltage. 3- The 4-layer diode is a thyristor that conducts when the voltage across its terminals exceeds the breakover potential. 4- The benefit of SCR Crowbar is power amplification. 5- Most op-amps require only a positive dc supply voltage.arrow_forwardA silicon (Si) npn bipolar transistor is doped with impurity concentrations of 10° cm, 10" cm, and 106 cm in the emitter, base and collector, respectively. The lengths of the emitter and collector length are 1 um and the base width is 500 nm. The device is operating at room temperature. (3) Determine the base current density in the transistor if the base emitter voltage VBs is forward biased with 0.5 V. Assume the base and emitter lengths are shorter than the diffusion length. (4) Explain why current gain is higher in npn transistors than in pnp transistors. (5) Sketch forward active lc vs. VE characteristics of the npn transistor as Vae increases with equal increments of voltage (e.g. 400 mv, 450 mv, 500 mv and 550 mV). You do not need to calculate values for collector current.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)Electrical EngineeringISBN:9780133923605Author:Robert L. BoylestadPublisher:PEARSON
Delmar's Standard Textbook Of ElectricityElectrical EngineeringISBN:9781337900348Author:Stephen L. HermanPublisher:Cengage Learning
Programmable Logic ControllersElectrical EngineeringISBN:9780073373843Author:Frank D. PetruzellaPublisher:McGraw-Hill Education
Fundamentals of Electric CircuitsElectrical EngineeringISBN:9780078028229Author:Charles K Alexander, Matthew SadikuPublisher:McGraw-Hill Education
Electric Circuits. (11th Edition)Electrical EngineeringISBN:9780134746968Author:James W. Nilsson, Susan RiedelPublisher:PEARSON
Engineering ElectromagneticsElectrical EngineeringISBN:9780078028151Author:Hayt, William H. (william Hart), Jr, BUCK, John A.Publisher:Mcgraw-hill Education,
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:PEARSON
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Cengage Learning
Programmable Logic Controllers
Electrical Engineering
ISBN:9780073373843
Author:Frank D. Petruzella
Publisher:McGraw-Hill Education
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:9780078028229
Author:Charles K Alexander, Matthew Sadiku
Publisher:McGraw-Hill Education
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:9780134746968
Author:James W. Nilsson, Susan Riedel
Publisher:PEARSON
Engineering Electromagnetics
Electrical Engineering
ISBN:9780078028151
Author:Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:Mcgraw-hill Education,