Microelectronics: Circuit Analysis and Design
Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 12, Problem 12.53P

For the transistors in the circuit in Figure P 12.53, the parameters are: h F E = 50 , V B E ( on ) = 0.7 V , and V A = . Using nodal analysis, determine the closed-loop current gain A i f = i o / i s .

Chapter 12, Problem 12.53P, For the transistors in the circuit in Figure P 12.53, the parameters are: hFE=50,VBE(on)=0.7V, and

Expert Solution & Answer
Check Mark
To determine

The value of the closed loop current gain of the circuit.

Answer to Problem 12.53P

The value of the current gain is 5.33 .

Explanation of Solution

Given:

The given diagram is shown in Figure 1

  Microelectronics: Circuit Analysis and Design, Chapter 12, Problem 12.53P , additional homework tip  1

Calculation:

The small signal model of the above circuit is shown below.

The required diagram is shown in Figure 2

  Microelectronics: Circuit Analysis and Design, Chapter 12, Problem 12.53P , additional homework tip  2

The expression to determine the value of the Thevenin resistance of the circuit is given by,

  RTH=( 1.4kΩ)( 17.9kΩ)( 1.4kΩ)+( 17.9kΩ)=1.298kΩ

The Thevenin voltage of the circuit is calculated as,

  VTH=( 1.4kΩ 1.4kΩ+17.9kΩ)10V=0.725V

The expression for the base current of the first transistor is given by,

  IB1=VTHVBE(on)RTH

Substitute 1.298kΩ for RTH , 0.7V for VBE(on) , and 0.725V for VTH in the above equation.

  IB1=0.725V0.7V1.298kΩ=0.0196mA

The expression to determine the collector current of the first transistor is given by,

  IC1=hFEIB1

Substitute 50 for hFE and 0.0196mA for IB1 in the above equation.

  IC1=50(0.0196mA)=0.98mA

The expression to determine the value of the base voltage of the second transistor is given by,

  VB2=10VIC1(7kΩ)

Substitute 0.98mA for IC1 in the above equation.

  VB2=10V(0.98mA)(7kΩ)=3.14V

The expression for the current IE2 is given by,

  IE2=VB2VBE(on)250Ω+250Ω

Substitute 3.14V for VB2 and 0.7V for VBE(on) in the above equation.

  IE2=3.14V0.7V250Ω+250Ω=3.25mA

The expression to determine the value of the collector current IC2 is given by,

  IC2=IE2(h FE1+h FE)

Substitute 3.25mA for IE2 and 50 for hFE in the above equation.

  IC2=(3.25mA)( 50 1+50)=3.19mA

The expression for the transconductance of the first transistor is given by,

  gm1=IC10.026V

Substitute 0.98mA for IC1 in the above equation.

  gm1=0.98mA0.026V=37.7mA/V

The expression for the small signal resistance is given by,

  rπ1=hFEgm1

Substitute 50 for hFE and 37.7mA/V for gm1 in the above equation.

  rπ1=5037.7mA/V=1.33kΩ

The expression for the transconductance of the second transistor is given by,

  gm2=IC20.026V

Substitute 3.19mA for IC2 in the above equation.

  gm2=3.19mA0.026V=123mA/V

The expression for the small signal resistance is given by,

  rπ2=hFEgm2

Substitute 120 for hFE and 123mA/V for gm2 in the above equation.

  rπ2=120123mA/V=0.408kΩ

Apply KCL at source iS .

  iS=Vπ11.4kΩ||1.79kΩ||rπ1+Vπ1V15kΩ

Substitute 1.33kΩ for rπ1 in the above equation.

  iS=V π11.4kΩ||1.79kΩ||1.33kΩ+V π1V15kΩ=1.722Vπ10.20V1 …… (1)

Apply KCL at node A.

  gm1Vπ1+Vπ2rπ2+Vπ2+VCE7kΩ=0

Substitute 37.7mA/V for gm1 and 0.408kΩ for rπ2 in the above equation.

  (37.7mA/V)Vπ1+V π20.408kΩ+V π2+V CE7kΩ=037.7Vπ1+2.594Vπ2+0.1429VCE=0 …… (2)

Apply KCL at node VCE .

  Vπ2rπ2+gm2Vπ2+VCEV1250Ω=0

Substitute 123mA/V for gm2 and 0.408kΩ for rπ2 in the above equation.

  V π20.408kΩ+(123mA/V)Vπ2+V CEV1250Ω=0125.5Vπ2=4VCE4V1 ……… (3)

Apply KCL at V1 .

  V CEV1250Ω=V1500Ω+V1V π15kΩVCE=1.55V10.05Vπ1

Substitute 1.55V10.05Vπ1 for VCE in equation (3).

  37.7Vπ1+2.594Vπ2+0.1429(1.55V10.05V π1)=0125.5Vπ2=2.20V10.20Vπ1 …… (4)

Substitute 1.55V10.05Vπ1 for VCE in equation (2).

  37.7Vπ1+2.594Vπ2+0.1429(1.55V10.05V π1)=0V1=170.16Vπ1+11.71Vπ2

Substitute 170.16Vπ1+11.71Vπ2 for V1 in equation (1).

  iS=1.722Vπ10.20(170.16V π1+11.71V π2)=35.75Vπ1+2.342Vπ2 ……. (5)

Substitute 170.16Vπ1+11.71Vπ2 for V1 in equation (4).

  125.5Vπ2=2.20(170.16V π1+11.71V π2)0.20Vπ1Vπ1=0.4040Vπ2

Substitute 0.4040Vπ2 for Vπ1 in equation (5).

  iS=35.75(0.4040V π2)+2.342(V π2)=12.10Vπ2 ….. (6)

The expression to determine the value of the output current is given by,

  iO=gm2Vπ2(2.2kΩ2.2kΩ+2kΩ)

Substitute and 123mA/V for gm2 in the above equation.

  iO=(123mA/V)Vπ2( 2.2kΩ 2.2kΩ+2kΩ)Vπ2=0.01552iO

Substitute 0.01552iO for Vπ1 in equation (6).

  iS=12.10(0.01552iO)iSiO=5.33

Conclusion:

Therefore, the value of the current gain is 5.33 .

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Chapter 12 Solutions

Microelectronics: Circuit Analysis and Design

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