Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 3, Problem 3.3EP
To determine
The value of
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Determine the approximate value of Ipss of the given
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O 8.33 mA
9.82 mA
10 mA
O 7.18 mA
1. Each E-MOSFET in the following figure has a Vas of +10 V or -10 V, depending on whether it is
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47 ΜΩ
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10 ΜΩ
+10 V
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10 ΚΩ
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10 MO
Σ 10 ΜΩ
(b)
-25 V
4.7 k
V1
R1
V2
Da
Db
R2
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V3
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Chapter 3 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 3 - An NMOS transistor with VTN=1V has a drain current...Ch. 3 - An PMOS device with VTP=1.2V has a drain current...Ch. 3 - (a) An nchannel enhancementmode MOSFET has a...Ch. 3 - The NMOS devices described in Exercise TYU 3.1...Ch. 3 - (a) A pchannel enhancementmode MOSFET has a...Ch. 3 - The PMOS devices described in Exercise TYU 3.3...Ch. 3 - The parameters of an NMOS enhancementmode device...Ch. 3 - An NMOS transistor has parameters VTNO=0.4V ,...Ch. 3 - Prob. 3.3EPCh. 3 - The transistor in Figure 3.26(a) has parameters...
Ch. 3 - For the transistor in the circuit in Figure 3.28,...Ch. 3 - Consider the circuit shown in Figure 3.30. The...Ch. 3 - Consider the circuit in Figure 3.30. Using the...Ch. 3 - (a) Consider the circuit shown in Figure 3.33. The...Ch. 3 - Consider the NMOS inverter shown in Figure 3.36...Ch. 3 - Consider the circuit shown in Figure 3.39 with...Ch. 3 - Consider the circuit in Figure 3.41. Assume the...Ch. 3 - Prob. 3.7TYUCh. 3 - Consider the circuit in Figure 3.43. The...Ch. 3 - For the circuit shown in Figure 3.36, use the...Ch. 3 - Consider the circuit shown in Figure 3.44. The...Ch. 3 - For the circuit shown in Figure 3.39, use the...Ch. 3 - For the MOS inverter circuit shown in Figure 3.45,...Ch. 3 - For the circuit in Figure 3.46, assume the circuit...Ch. 3 - The circuit shown in Figure 3.45 is biased at...Ch. 3 - The transistor in the circuit shown in Figure 3.48...Ch. 3 - In the circuit in Figure 3.46, let RD=25k and...Ch. 3 - For the circuit shown in Figure 3.49(a), assume...Ch. 3 - Prob. 3.15EPCh. 3 - Consider the constantcurrent source shown in...Ch. 3 - Consider the circuit in Figure 3.49(b). Assume...Ch. 3 - Consider the circuit shown in Figure 3.50. Assume...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The transistor parameters for the circuit shown in...Ch. 3 - The parameters of an nchannel JFET are IDSS=12mA ,...Ch. 3 - The transistor in the circuit in Figure 3.62 has...Ch. 3 - For the pchannel transistor in the circuit in...Ch. 3 - Consider the circuit shown in Figure 3.66 with...Ch. 3 - The nchannel enhancementmode MESFET in the circuit...Ch. 3 - For the inverter circuit shown in Figure 3.68, the...Ch. 3 - Describe the basic structure and operation of a...Ch. 3 - Sketch the general currentvoltage characteristics...Ch. 3 - Describe what is meant by threshold voltage,...Ch. 3 - Describe the channel length modulation effect and...Ch. 3 - Describe a simple commonsource MOSFET circuit with...Ch. 3 - Prob. 6RQCh. 3 - In the dc analysis of some MOSFET circuits,...Ch. 3 - Prob. 8RQCh. 3 - Describe the currentvoltage relation of an...Ch. 3 - Describe the currentvoltage relation of an...Ch. 3 - Prob. 11RQCh. 3 - Describe how a MOSFET can be used to amplify a...Ch. 3 - Describe the basic operation of a junction FET.Ch. 3 - Prob. 14RQCh. 3 - (a) Calculate the drain current in an NMOS...Ch. 3 - The current in an NMOS transistor is 0.5 mA when...Ch. 3 - The transistor characteristics iD versus VDS for...Ch. 3 - For an nchannel depletionmode MOSFET, the...Ch. 3 - Verify the results of Example 3.4 with a PSpice...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - The threshold voltage of each transistor in Figure...Ch. 3 - Consider an nchannel depletionmode MOSFET with...Ch. 3 - Determine the value of the process conduction...Ch. 3 - An nchannel enhancementmode MOSFET has parameters...Ch. 3 - Consider the NMOS circuit shown in Figure 3.36....Ch. 3 - An NMOS device has parameters VTN=0.8V , L=0.8m ,...Ch. 3 - Consider the NMOS circuit shown in Figure 3.39....Ch. 3 - A particular NMOS device has parameters VTN=0.6V ,...Ch. 3 - MOS transistors with very short channels do not...Ch. 3 - For a pchannel enhancementmode MOSFET, kp=50A/V2 ....Ch. 3 - For a pchannel enhancementmode MOSFET, the...Ch. 3 - The transistor characteristics iD versus SD for a...Ch. 3 - A pchannel depletionmode MOSFET has parameters...Ch. 3 - Calculate the drain current in a PMOS transistor...Ch. 3 - sDetermine the value of the process conduction...Ch. 3 - Enhancementmode NMOS and PMOS devices both have...Ch. 3 - For an NMOS enhancementmode transistor, the...Ch. 3 - The parameters of an nchannel enhancementmode...Ch. 3 - An enhancementmode NMOS transistor has parameters...Ch. 3 - An NMOS transistor has parameters VTO=0.75V ,...Ch. 3 - (a) A silicon dioxide gate insulator of an MOS...Ch. 3 - In a power MOS transistor, the maximum applied...Ch. 3 - In the circuit in Figure P3.26, the transistor...Ch. 3 - The transistor in the circuit in Figure P3.27 has...Ch. 3 - Prob. D3.28PCh. 3 - The transistor in the circuit in Figure P3.29 has...Ch. 3 - Consider the circuit in Figure P3.30. The...Ch. 3 - For the circuit in Figure P3.31, the transistor...Ch. 3 - Design a MOSFET circuit in the configuration shown...Ch. 3 - Consider the circuit shown in Figure P3.33. The...Ch. 3 - The transistor parameters for the transistor in...Ch. 3 - For the transistor in the circuit in Figure P3.35,...Ch. 3 - Design a MOSFET circuit with the configuration...Ch. 3 - The parameters of the transistors in Figures P3.37...Ch. 3 - For the circuit in Figure P3.38, the transistor...Ch. 3 - Prob. 3.39PCh. 3 - Prob. 3.40PCh. 3 - Design the circuit in Figure P3.41 so that...Ch. 3 - Prob. 3.42PCh. 3 - Prob. 3.43PCh. 3 - Prob. 3.44PCh. 3 - Prob. 3.45PCh. 3 - Prob. 3.46PCh. 3 - Prob. 3.47PCh. 3 - The transistors in the circuit in Figure 3.36 in...Ch. 3 - For the circuit in Figure 3.39 in the text, the...Ch. 3 - Prob. 3.50PCh. 3 - The transistor in the circuit in Figure P3.51 is...Ch. 3 - Prob. 3.52PCh. 3 - For the twoinput NMOS NOR logic gate in Figure...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - All transistors in the currentsource circuit shown...Ch. 3 - Consider the circuit shown in Figure 3.50 in the...Ch. 3 - The gate and source of an nchannel depletionmode...Ch. 3 - For an nchannel JFET, the parameters are IDSS=6mA...Ch. 3 - A pchannel JFET biased in the saturation region...Ch. 3 - Prob. 3.60PCh. 3 - Prob. 3.61PCh. 3 - The threshold voltage of a GaAs MESFET is...Ch. 3 - Prob. 3.63PCh. 3 - Prob. 3.64PCh. 3 - Prob. 3.65PCh. 3 - For the circuit in Figure P3.66, the transistor...Ch. 3 - Prob. 3.67PCh. 3 - Prob. 3.68PCh. 3 - For the circuit in Figure P3.69, the transistor...Ch. 3 - Prob. 3.70PCh. 3 - Prob. 3.71PCh. 3 - Prob. 3.72PCh. 3 - Using a computer simulation, verify the results of...Ch. 3 - Consider the PMOS circuit shown in Figure 3.30....Ch. 3 - Consider the circuit in Figure 3.39 with a...Ch. 3 - Prob. D3.79DPCh. 3 - Consider the multitransistor circuit in Figure...
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Similar questions
- For an N-channel JFET Idss = 8mA and Vp = -6V, if Vgs = -2V then what is the value of the Drain current? a.2.666 mA b.3.55 mA c.5.33 mA d.3.5 microAarrow_forwardExplain what each component is in the design below: DD 7Ro PQ5 8Eo DD 9 So 10 - type of circuit? 1. 6. 2. 7. 3. 8. 4. 9. 5. 10. COarrow_forwardThe output of a LVDT is connected to 10 V voltmeter through an amplifier of amplification factor 515. The voltmeter scale has 174 divisions and the scale can be read to 1/3th of a division. An output of 6.6 mV appears across the terminals of the LVDT when the core is displaced through a distance of 2.6 cm. Calculate (a) the sensitivity of the LVDT, (b) sensitivity of the whole setup and (c) the resolution of the instrument in cmarrow_forward
- In the circuit in Figure B1 with circuit and transistor parameters Rp = 20kn, K₂ = 0.1 mA/V², VTN = 0.8 V, and λ = 0. 2. V₁=5 V, V₂ = 0 al 3. V₁= V/₂=5 V M₁ VDD=5 V IDI V₂ Rp Ţ Figure B1 M₂ Determine the currents IR, ID1, D2, and voltage V, in a digital logic gate for the following input conditions: 1. V₁ V₂ = 0 V 102arrow_forwardQ3) Draw the output signal of the circuit shown in Figure 1 R1 ww 2000 R4 m 5KQ V4 R2 U1 2V 10k0 5 V1 2Vrms 1Hz 0 Figure 1 R3 m 10k0 Voutarrow_forwarduO 9:.0 * ZAIN IQ lı. A docs.google.com Q3/C: Determine VCE in the stiff voltage-divider biased transistor .circuit if BDC = 100 %3D Vcc +10 V R1 10 kN RC 1.0 k2 R2 5.6 kN RE 560 N VCE=1.95 (O 2.95 3.95 O 0.95 3.5 O None of thesearrow_forward
- 2. Analyze the following circuit to find the values of ID and Vps using the Method of Assumed State. You must validate your assumptions. Hint: Use ID as unknown . Use Ohm's law to represent Vp and Vs in terms of . k = k lov 5KSL un Note: The formulas for a MOSFET are given For MOSFET W L 5V. VDS V₁=1V k=2mA/² -ww 3K M ID = 0, if Vas < VT ID = k [(VGs - VT) VDs - Vs , if VGS ≥ VT and Vps < (VGs - VT) ID k (Vas-VT)², if Vas ≥ VT and VDs ≥ (VGS-VT)arrow_forward5. For the circuit shown in the figure below find the following a. Write the name of the circuit..... b. Find the value of IB, IC and VCE c. Draw the DC load line d. Mark the operating point or Q-point [assume ß-150 and VBE=0.7V] RB www 150ΚΩ G +Vcc 20V VBE Rc SKΩ VCE * 10ΚΩ - VEE -20Varrow_forwardYou are working as a hardware engineer in an R&D department and your new task is to design a voltage divider bias circuit. Vcc You are told that you have to use a 2N2222A transistor manufactured by Central Semiconductor Corp. and a power supply of Vcc = 22 V. RC R1 a. Find the datasheet of the selected transistor in Internet and upload it together with your homework. b. From the datasheet identify the range of B suitable for the Ica required in this problem and use the minimum value in your design. R2 RE c. Calculate the values of four resistors so that VCEQ = 12V and Ica = 1.4 ma. Make sure that you select standard resistor values. d. Plot the load line and indicate the operating point on it. Is the location of operating point is a good one for an amplifier with a reasonable performance ? Explain your answer.arrow_forward
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