Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.1TYU
To determine
The required current, voltage and power rating of the MOSFET.
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QUE STION FIVE
A) For the drauit of Figure 8, determine the following parameters Ig, Ip, Ves,VD. Vac and
then state the mode in which the BJT is operating.
Use either the graphical (using a graph paper) approach or the mathematical
approach
Vcc
Given :
Vcc = 20 V
oss = 8mA
%3D
RB
Vc
V, =-4 V
Vss =-1 V
B =100
R3 = 470 2
Rc = 36 kn
Rs=1 k2
VD
RG
RG = 2 M2
%3!
Vss
Figure 8
B) A magnetic drcuit comprises three parts in series, each of uniform cross-ectional area (c.s.a).
They are: part (a) al ength of 80mm and c.s.a. 50mm, part (b) alength of 60mm and c.s.a.
90mm, pert (c) anairgap of length 0.5mm and c.s.a. 150mm.
A coil of 4000 tums is wound on part (b), and the flux density in the airgap is 0.30 T. Assuming
that all the flux passes through the given circuit, and that the relative permeability u, is 1300.
i.
Draw a well labdledmagnetic andequi valent electric circuit.
Estimate the coil current to produce such a flux density.
ii.
3. Write down which transistor structure each curve characteristic belongs to in the figure.
Ip
-VGS
-VGS
+VGs
(c)
VGS
(b)
(a)
8.15
MECT361
Mechatronics Components and Instrumentation
8.15. Using the Internet, look up the specifications for the National Semiconductor
( www.national.com ) ADC0800 8-bit A/D converter. Determine the maximum sam-
pling rate and the method for performing the conversion. Also define each of the
inputs and outputs.
PLEASE GIVE ME THE REFRENCE
I Will get zero if you didn't put the refrence
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- Set up a midpoint bias for a JFET with IDSS = 14 mA and VGS(off) = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the value of ID. Indicate the value of VGS. Indicate the value of VDS.arrow_forward9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.arrow_forward2 Figure P8.42 shows a simple current-to-voltage converter. Show that the voltage Vout is proportional to the current generated by the cadmium sulfide (CdS) solar cell. Also show that the transimpedance of the circuit Vont/I, is –R. 1, 7CdS cell 6-Vaarrow_forward
- 8.* A single phase bridge rectifier supplies a IkW washing machine induction motor drive. The smoothing capacitance is 6.8 mF and the smoothing inductance is 5 mH. At full load, the equivalent resistance of the induction motor is 24 2. The ac supply is 220 V (60Hz). (a) (b) (c) Estimate the ripple What is the capacitor 'de link' voltage under full load? What is the % voltage regulation no load to full load? ?arrow_forwardSketch carefully the following signal.in dsp material or signal and systemarrow_forward04:- Design a bias circuit for NPN silicon transistor having a nominal B-100 to be used in voltage divider circuit with Q-point of Ic 10 mA and VCE = 10 V. Use standard valued 5% resistors and draw a schematic diagram of your design. (10 points)arrow_forward
- 4) Consider the clamping circuit below, assume Vref=3 V and Vin=5sin(wt) ..Draw the output voltage waveform. Clearly mark the max and min of the voltage.. Vrefarrow_forwardquestion from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?arrow_forwardFor the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQarrow_forward
- Subject:Electronics Engineering How MOSFET has been constructed? Explain the principle of operation of MOSFET at different values of VGS and VDSarrow_forwardFor the circuit shown below: Find the maximum and minimum Zener current.arrow_forwardAnswwr for both circuit... Answer for both cktarrow_forward
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