Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Chapter 8, Problem 8.2TYU
(a)
To determine
The minimum value of the
(b)
To determine
The minimum transistor power rating.
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9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and
VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power
rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.
3. Write down which transistor structure each curve characteristic belongs to in the figure.
Ip
-VGS
-VGS
+VGs
(c)
VGS
(b)
(a)
question from book ELECTRONIC CIRCUIT DESIGN :
Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- b) Consider the transistor circuit as shown in figure 8. The emitter area of the transistor Q2 is 20 times the other transistors. Calculate the value of Ic, and Ic,.Assume that the ß of the transistor is very high. SmA Q1 Ic2 Q2 Figure 8arrow_forwardQa: A transistor dissipates 50W in an ambient temperature of 60°C, the thermal resistances are 0-0.5 °CW¹, 8ca-4 °CW. Determine the junction temperature without a heat sink. Determine the thermal resistance of the heat sink to avoid the junction temperature exceeding 180°C. )arrow_forwardFor the common emitter configuration, the current amplification factor (B) is 90. What will be the value of the current amplification factor (a)? a. 0.5 b. 0.95 c. 0.978 d. 0.989arrow_forward
- A Bipolar junction Transistor with curreat amplification factor being 100, Input Base current is 50μA. Collector voltage is 10 V and biasing voltage being +20 V. Find followings a. Collector current b. Resistance (R1) c. Collector voltage , Emitter voltage , Base Voltage & Collector-Emitter Voltage.arrow_forwardwith the aid of a diagram describe a simple common emitter circuit with npn bipolar transitor and discus the relationship between base emitter voltage and base currentarrow_forwardTEST Read the question carefully. Write the letter for each correct answer in the blank space provided. A 1. Maximum power is delivered from a source of power to a load when the a. load current is equal to the power source current b. impedance of the load is equal to the output impedance of the power source c. output impedance of the power source is high compared to the impedance of the load d. output impedance of the power source is low compared to the impedance of the load 2. The emitter follower is a (an) a. impedance matching device b. high gain voltage amplifier c. phase inverter d. combination power and voltage amplifier 3. The emitter follower uses a. no collector resistor b. a forward bias collector-base junction c. negative feedback (degeneration) d. an NPN transistor only 4. The emitter follower has output resistance. a. high, high b. low, low c. low, high d. high, low input resistance and 5. The current gain of an emitter follower is a. less than 1 b. equal to 1 c. greater…arrow_forward
- A 4.7 zener diode is connected to the base resistor. The left side of the resistor sits at about 12V. The right side of the biasing resistor is connected to the Zener and npn transistor. The Zener bias is 5mA. The base current needed is 80uA. What is the appropriate resistor for this circuit? (In kohms) Iarrow_forwardFor the Enhancement-type MOSFET in following figure, 1.Determine IDQ and VGSQarrow_forwardQuestion: 8. With the emitter bias shown, a reasonable assumption for troubleshooting work is that the VcC a. base voltage =+1 V +15 V b. emitter voltage = +5 V RC 3.9 k2 c. emitter voltage =-1 V d. collector voltage = Vcc RB 68 kQ %3D RE 7.5 kQ VEE -15 Varrow_forward
- These are all about Bipolar Junction Transistors: How do you ensure that a BJT is in saturation? Give an example of an application that uses a BJT switch.arrow_forwardA) Find and draw the equivalent re circuit model. Calculate the voltage gain.arrow_forward4 For the transistor shown in below figure, Calculate the value of R, that will just make the transistor work as closed switch. Hence Bpc= 80, VBE = 0.7V, VCE(sat) = 0.2V, Vcc= 12V, Rc= 2.7KN. la) Calculate the In and I.. Vcc RB Rc |b) Calculate Rp- B'arrow_forward
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