Microelectronics: Circuit Analysis and Design
4th Edition
ISBN: 9780073380643
Author: Donald A. Neamen
Publisher: McGraw-Hill Companies, The
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Question
Chapter 8, Problem 8.24P
(a)
To determine
The maximum value of the output voltages,
(b)
To determine
The value of the conversion efficiency.
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Complete the given BJT circuit.
Solve for the value of the resistors and the voltage supply that will satisfy the given DC
loadline. Assume IC=IE and RC=RE.
Show and label properly the required final circuit.
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Q-1-b) Describe briefly the input / output characteristics and application of Common
Emitter BJT Configuration
The fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. Find the collector current, IC (if β of transistor is 60)
Chapter 8 Solutions
Microelectronics: Circuit Analysis and Design
Ch. 8 - Prob. 8.1EPCh. 8 - Prob. 8.2EPCh. 8 - Prob. 8.3EPCh. 8 - Prob. 8.1TYUCh. 8 - Prob. 8.2TYUCh. 8 - Prob. 8.3TYUCh. 8 - Prob. 8.4EPCh. 8 - Prob. 8.5EPCh. 8 - Prob. 8.7EPCh. 8 - Prob. 8.4TYU
Ch. 8 - Prob. 8.5TYUCh. 8 - Prob. 8.6TYUCh. 8 - A transformercoupled emitterfollower amplifier is...Ch. 8 - Prob. 8.7TYUCh. 8 - Prob. 8.9EPCh. 8 - Prob. 8.11EPCh. 8 - Consider the classAB output stage shown in Figure...Ch. 8 - From Figure 8.36, show that the overall current...Ch. 8 - Prob. 1RQCh. 8 - Describe the safe operating area for a transistor.Ch. 8 - Why is an interdigitated structure typically used...Ch. 8 - Discuss the role of thermal resistance between...Ch. 8 - Define and describe the power derating curve for a...Ch. 8 - Define power conversion efficiency for an output...Ch. 8 - Prob. 7RQCh. 8 - Describe the operation of an ideal classB output...Ch. 8 - Discuss crossover distortion.Ch. 8 - What is meant by harmonic distortion?Ch. 8 - Describe the operation of a classAB output stage...Ch. 8 - Describe the operation of a transformercoupled...Ch. 8 - Prob. 13RQCh. 8 - Sketch a classAB complementary MOSFET pushpull...Ch. 8 - What are the advantages of a Darlington pair...Ch. 8 - Sketch a twotransistor configuration using npn and...Ch. 8 - Prob. 8.1PCh. 8 - Prob. 8.2PCh. 8 - Prob. 8.3PCh. 8 - Prob. 8.4PCh. 8 - Prob. 8.5PCh. 8 - Prob. D8.6PCh. 8 - A particular transistor is rated for a maximum...Ch. 8 - Prob. 8.8PCh. 8 - For a power MOSFET, devcase=1.5C/W , snkamb=2.8C/W...Ch. 8 - Prob. 8.10PCh. 8 - The quiescent collector current in a BiT is ICQ=3A...Ch. 8 - Prob. 8.12PCh. 8 - Prob. 8.13PCh. 8 - Prob. 8.14PCh. 8 - Prob. 8.15PCh. 8 - Prob. 8.16PCh. 8 - Consider the classA sourcefollower circuit shown...Ch. 8 - Prob. 8.18PCh. 8 - Prob. 8.19PCh. 8 - Prob. 8.20PCh. 8 - Prob. 8.21PCh. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Consider an idealized classB output stage shown in...Ch. 8 - Prob. 8.24PCh. 8 - For the classB output stage shown in Figure P8.24,...Ch. 8 - Prob. 8.26PCh. 8 - Prob. 8.27PCh. 8 - Consider the classAB output stage in Figure P8.28....Ch. 8 - Prob. 8.29PCh. 8 - Prob. D8.30PCh. 8 - Prob. 8.31PCh. 8 - Prob. D8.32PCh. 8 - Consider the transformercoupled commonemitter...Ch. 8 - The parameters for the transformercoupled...Ch. 8 - A BJT emitter follower is coupled to a load with...Ch. 8 - Consider the transformercoupled emitter follower...Ch. 8 - A classA transformer-coupled emitter follower must...Ch. 8 - Repeat Problem 8.36 if the primary side of the...Ch. 8 - Consider the circuit in Figure 8.31. The circuit...Ch. 8 - Prob. D8.40PCh. 8 - The value of IBiass in the circuit shown in Figure...Ch. 8 - The transistors in the output stage in Figure 8.34...Ch. 8 - Consider the circuit in Figure 8.34. The supply...Ch. 8 - Prob. 8.44PCh. 8 - Prob. 8.45PCh. 8 - Consider the classAB MOSFET output stage shown in...Ch. 8 - Prob. 8.47PCh. 8 - Consider the classAB output stage in Figure P8.48....Ch. 8 - For the classAB output stage in Figure 8.36, the...
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- 9. Design a biased-transistor circuit using VBB = Vcc= 10 V for a Q-point of Ic = 5 mA and VCE 4 V. Assume pc = 100. The design involves finding RB, RC, and the minimum power rating of the transistor. (The actual power rating should be greater.) Sketch the circuit.arrow_forwardInstruction/s: Draw, Illustrate and label your schematic diagram before solving the problem.2.) Given a Collector -Feedback Biased transistor circuit with voltage at common collector is +10v ,base resistor is 100k ohms, Collector resistor is 10k ohms and Base current is 8.38 micro ampere, ,Voltage at Base-emitter junction is 0.7v. Determine Beta DC , Collector current and Voltage at collector-emitter junction. These might help as a guide to answer the problem...arrow_forward4. For the transistor in the figure shown below, the parameters are ß = 100 and VÀ = ∞. a. Design the circuit such that lEQ = 1mA and the Q-pt is in the center of the dc load line. b. If the peak-to-peak sinusoidal output voltage is 4V, determine the peak-to-peak sinusoidal signals at the base of the transistor and the peak-to-peak value of Vs. If the load resistor R₁ = 1kQ is connected to the output through a coupling capacitor, determine the peak-to-peak value in the output voltage, assuming vs is equal to the value determined in part (b). Vcc=+10 V www Rs = 0.7 kΩ Cc www RB RE voarrow_forward
- 2 Figure P8.42 shows a simple current-to-voltage converter. Show that the voltage Vout is proportional to the current generated by the cadmium sulfide (CdS) solar cell. Also show that the transimpedance of the circuit Vont/I, is –R. 1, 7CdS cell 6-Vaarrow_forwardIn the lectures, we discussed how to use an NPN BJT as an emitter follower. In the circuit below, the emitter follower is connected to a non-ideal voltage source V with a source resistance R. Assume beta = 100, V = 0.7 V, V = 0 V. BE CE,sat a. If R = 0 and V₁ = 3 V, determine the value of V. b. If R = 5k and V = 3 V, determine the value of V. S c. If R = 5k , determine the value of V that will cause the BJT to start S saturating. +5V Rs Vs M Vo R₁=1Karrow_forwardQ.4: (A) / Find the performance parameters (FF, RF and 7) for the single-phase bridge uncontrolled rectifier with (RL) Load. If the phase voltage: Vph(t) = Vm sin(wt). Draw the circuit diagram and sketch the voltages and current waveforms.arrow_forward
- Q. Consider the following non-matched CMOS inverter shown in the figure with Vtn=-Vtp=0.4 V, and Kn=0.3mA/V?, and Kp=1.5mA/V? VDD ipp ס ןשarrow_forwardThe fixed bias circuit shown in figure uses a silicon transistor with VBE = 0.7V. 10 (a) Find the collector current, IC, and voltage VCE, if ß of transistor is 60. (b) Find IC and VCE if B changes to 80. What conclusions may be drawn? +Vcc (9V) 60k 0.5k + VCE VBEarrow_forward1. For the circuit in Figure 1: a) Calculate the input and output power if the input signal results in a base current of 5 mA rms. b) Calculate the input power dissipated by the circuit if Rg is changed to 1.5 kN. c) What maximum output power can be delivered by the circuit if RB is changed to 1.5 kN? d) If the circuit is biased at its center voltage and center collector operating point, what is the input power for a maximum output power of 1.5 W? +Vcc (18 V) Rc = 16 2 RB 1.2 k2 V. B - 40 100 µF Figure 1arrow_forward
- The maximum values in the transistor circuit transferred to the side are given below. Maximum VCC voltage of BJT under normal conditionscalculate. PD(max)=24/100 W VCE(MAX)=20V IC(MAX)=100mA ßDC=150arrow_forward2. A single transistor amplifier is shown in the circuit to the right. The input is a 100 kHz sine wave from a very low impedance source, with a 1 mV peak-to-peak amplitude. hfe, the forward current gain of the transistor, is 300. The base reverse leakage current is 1 nA. The ideality factor for the base-emitter diode is 2, so nkT= 50 mV. a. What are the voltages relative to ground and the currents flowing into, into, and out from the collector, the base, and the emitter, respectively? b. What is the impedance of the 1 µF capacitors at 100 kHz and what effect will this have on the gain of the amplifier? c. What is the gain of the amplifier and how does it depend on the hfe of the transistor? Luff Vin maits Ik { +V₁ = +15V املا Vo Sik Y 1 Fb V₂ I m Vout MF 2K = 250 hfő - -15V --Y₂arrow_forward. Design a fixed bias-transistor circuit using V = Vcc = 10 V for a Q-point of Iç = 5 mA and Va 4 V. Assume Boc = 100.The design involves finding R, and Rc. inakomeont thot one is hiasedarrow_forward
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