Physics for Scientists and Engineers
Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
Question
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Chapter 38, Problem 12P

(a)

To determine

The elements used to dope silicon to create a n type semiconductor.

(b)

To determine

The elements used to dope silicon to create a p -type semiconductor.

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1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).
In a p-type semiconductor with a defect-rich surface the surface recombination velocity is 104 cm/s. (i) draw a schematic figure illustrating how the surface recombination flux changes with input light intensity; (ii) How does the surface recombination flux change with doping level?
The figure below shows a portion of the energy band diagram of a p-n semiconductor junction. According to the situation shown in the figure, in the equilibrium condition, we can identify the currents as follows:(a) i1:electron diffusion current, i2:electron drift current, i3:hole diffusion current and i4:hole drift current. (b) i1:hole drift current, i2:electron drift current, i3:hole diffusion current and i4:electron diffusion current. (c) i1:hole diffusion current, i2:electron drift current, i3:hole drift current and i4:electron diffusion current. (d) i1:electron diffusion current, i2:electron diffusion current, i3:hole drift current and i4:hole drift current. (e) i1:hole drift current, i2:electron diffusion current, i3:hole diffusion current and i4:electron drift current.
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