Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 38, Problem 38P
To determine
The energy gap for semiconductor.
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Chapter 38 Solutions
Physics for Scientists and Engineers
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
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- The gap between valence and conduction bands in diamond is 5.47 eV.What is the maximum wavelength of a photon that can excite an electron from the top of the valence band into the conduction band? In what region of the electromagnetic spectrum does this photon lie?arrow_forwardBecause of its semiconducting properties, CdSCdS is sometimes used in electronic devices. The band gap energy for CdSCdS is 2.40 eVeV . What is wavelength of a photon with this energy?arrow_forwardQuestion 11: A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 ev. Can it detect a wavelength of 6000 nm?arrow_forward
- When an electron in the compound semiconductor AlAs makes a transition from the conduction band to the valence band, a 574-nm photon is emitted. What is the size of the band gap?arrow_forwardWith respect to electron energy bands in insulators, conductors and semi- conductors, the 'Energy Gap' can be defined as: a. The highest average energy states occupied by the electrons in a material at a given temperature. b. The difference in energy levels between the highest energy level of the valence energy band and the lowest energy level in the conduction band. c. The energy level which has a 50% probability of getting occupied by an electron at a given temperature. d. The difference in energy levels between the lowest energy level of the valence energy band and the highest energy level in the conduction band.arrow_forwardK: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.arrow_forward
- The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?arrow_forwardWhich statement about the intrinsic carrier concentration in a semiconductor material is FALSE? The intrinsic carrier concentration is exponentially dependent on the inverse of the temperature of the semiconductor material. In an intrinsic semiconductor material, the concentration of electrons in the conduction band is equal to the concentration holes in the valence band. The intrinsic carrier concentration of a semiconductor material at a constant temperature depends on the Fermi energy. The intrinsic Fermi energy is positioned near the center of the bandgap for an intrinsic semiconductor.arrow_forwardThe plot of the E field with respect to x in a metal semiconductor junction at 300K is shown in the figure. The semiconductor is Si and E(0)=-2x10* V/cm and xo-0.2x10 cm. What is the semiconductor type and built in potential value. レEo) O a. n type 200 mV O b. n type 800 mv Oc p type 400 mV Od. p type 200 mV O e. n type 400 mV Of. p type 800 mvarrow_forward
- An LED emits light with a wavelength of 500 nm (500x10-9m). What is the band gap energy in electron Volts? Hint: recall Eq. (2) and 1 eV= 1.6 x10-19 J 1.2 eV 2.5 eV 3.3 eV 4.1 eV 5.5 eVarrow_forwardAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.arrow_forwardThe peak of the spectral intensity in the emission spectrum of the sun is between 0.4 and 0.8 um wavelength You are using two different semiconductors one with a band gap of 1.24 eV and the other with a band gap of 2.07 eV as photo-absorbers for solar cell application. With the information given, please comment briefly on the likely losses in efficiency they will suffer each.arrow_forward
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