Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 38, Problem 49P
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A Si p- n junction with cross sectional area A= 0.01cm? is formed with N3=2x1017 cm3, Na=
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At room temperature under the forward bias of 0.15 V the current through a p-n junction is 1.66 mA. What will
be the current through the junction under a reverse bias of 0.15 V at T=250K? Assume that the zero-bias current
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3.
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Chapter 38 Solutions
Physics for Scientists and Engineers
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
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- (a) A forward-bias voltage of 15.0 mV produces a positive current of 9.25 mA through a p-n junction at 300 K. What does the positive current become if the forward-bias voltage is reduced to 10.0 mV? (b) For reverse-bias voltages of -15.0 mV and -10.0 mV, what is the reverse-bias negative current?arrow_forward1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).arrow_forwardGiven V(X) = 6.5 In proof testing of circuit boards, the probability that any particular diode will fail is .01. Suppose a circuit board contains 400 diodes. Write the suitable approximate pmf for the number of diodes on a board that fail.arrow_forward
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