Physics for Scientists and Engineers
Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 38, Problem 71P
To determine

The number of free electrons present per potassium atom in a crystal of potassium.

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Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
The active area of the amd ryzen 5950x processor in high end computers today has about 19.2 billion transistors (transistors are semiconductor device that control electronic processes). The dimensions of the die sizes are 2x 80.7 + 125 (I/O) mm2 (please refer to the image below.). What are the dimensions of one transistor on the die, assuming that all of the area across the die is transistors and each is a square?
1 A bar of n-type germanium 10mmx1mmx1mm. The electron density in the bar is 7×10²1 m³ and B=0.2 Wb/m². If one millivolt is applied across the long ends of the bar, determine the current through the bar, the Hall coefficient and the Hall voltage. Assume n = 0.39 m²/v.s. Ans: 43.6 μA; 8.9×10-4 m³/C; 7.76 μV.
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