Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
expand_more
expand_more
format_list_bulleted
Question
Chapter 38, Problem 4P
(a)
To determine
The name of two metals from Table 38-2.
(b)
To determine
The value of contact potential.
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
(a) For indium phosphide (InP) at room
temperature, calculate the electron and
hole mobilities for the following cases :
For intrinsic InP, the electrical
conductivity, the number of electrons
per cubic meter and the number
of holes
per cubic meter
are
2.5 x 10-6 (22m)¹, 3× 10¹3 m -3
and
3 x 1013 m3, respectively. Similarly, for
n-type extrinsic InP, the electrical
conductivity, the number of electrons
per cubic meter and the number of
cubic meter
holes
per
3-6x 10-6 (2m), 4.5 × 10¹3-3
2 x 10¹3 m³, respectively.
are
and
A bar of copper of (2cm) length and resistively of (1.8 × 10-8m) is
connected to power supply of (10V). Find the mobility and drift ve-
locity of the electrons if electron density in copper is (8.5x10²8 m-³)?
(a) Show that the resistivity of intrinsic germanium at 300 °K is 0.45 2.m if
n₁ = 2.5×10¹⁹ m²³, n = 0.38 m²/V.s, p = 0.18 m²/v.s.
-3
(b) If a donor-type impurity added to the extent of 1 atom per 108 germanium atoms, prove
that the resistivity drops to 0.037 2.m. Density = 5.32x10³ Kg/m³, atomic weight
72.6.
Chapter 38 Solutions
Physics for Scientists and Engineers
Ch. 38 - Prob. 1PCh. 38 - Prob. 2PCh. 38 - Prob. 3PCh. 38 - Prob. 4PCh. 38 - Prob. 5PCh. 38 - Prob. 6PCh. 38 - Prob. 7PCh. 38 - Prob. 8PCh. 38 - Prob. 9PCh. 38 - Prob. 10P
Ch. 38 - Prob. 11PCh. 38 - Prob. 12PCh. 38 - Prob. 13PCh. 38 - Prob. 14PCh. 38 - Prob. 15PCh. 38 - Prob. 16PCh. 38 - Prob. 17PCh. 38 - Prob. 18PCh. 38 - Prob. 19PCh. 38 - Prob. 20PCh. 38 - Prob. 21PCh. 38 - Prob. 22PCh. 38 - Prob. 23PCh. 38 - Prob. 24PCh. 38 - Prob. 25PCh. 38 - Prob. 26PCh. 38 - Prob. 27PCh. 38 - Prob. 28PCh. 38 - Prob. 29PCh. 38 - Prob. 30PCh. 38 - Prob. 31PCh. 38 - Prob. 32PCh. 38 - Prob. 33PCh. 38 - Prob. 34PCh. 38 - Prob. 35PCh. 38 - Prob. 36PCh. 38 - Prob. 37PCh. 38 - Prob. 38PCh. 38 - Prob. 39PCh. 38 - Prob. 40PCh. 38 - Prob. 41PCh. 38 - Prob. 42PCh. 38 - Prob. 43PCh. 38 - Prob. 44PCh. 38 - Prob. 45PCh. 38 - Prob. 46PCh. 38 - Prob. 47PCh. 38 - Prob. 48PCh. 38 - Prob. 49PCh. 38 - Prob. 50PCh. 38 - Prob. 51PCh. 38 - Prob. 52PCh. 38 - Prob. 53PCh. 38 - Prob. 54PCh. 38 - Prob. 55PCh. 38 - Prob. 56PCh. 38 - Prob. 57PCh. 38 - Prob. 58PCh. 38 - Prob. 59PCh. 38 - Prob. 60PCh. 38 - Prob. 61PCh. 38 - Prob. 62PCh. 38 - Prob. 63PCh. 38 - Prob. 64PCh. 38 - Prob. 65PCh. 38 - Prob. 66PCh. 38 - Prob. 67PCh. 38 - Prob. 68PCh. 38 - Prob. 69PCh. 38 - Prob. 70PCh. 38 - Prob. 71PCh. 38 - Prob. 72PCh. 38 - Prob. 73PCh. 38 - Prob. 74PCh. 38 - Prob. 75PCh. 38 - Prob. 76P
Knowledge Booster
Similar questions
- (a) Show that the skin depth in a poor conductor (o « we) is (2/0)JE/µ (independent of frequency). Find the skin depth (in meters) for (pure) water. (b) Show that the skin depth in a good conductor (ơ » we) is à /27 (where à is the wavelength in the conductor). Find the skin depth (in nanometers) for a typical metal (a 107 (2 m)-') in the visible range (» z 1015/s), assuming e = €o and µ z µo. Why are metals opaque?arrow_forwardFind the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(N.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3 , µn=1200 * .Cm2/V.sec & up=400Cm^2/V.secarrow_forwardA sample of Si is doped with 10' phosphorus atoms /cm® , find the Hall voltage in a sample with W=500 pm, A=0.25 mm?, I= 1mA, and B,=10* Wb/cm?.arrow_forward
- Check Your Understanding If a=3+4i , what is the product a* a?arrow_forwardThe Type K thermocouple has a sensitivity of about 41 micro-Volts/℃, i.e. for each degree difference in the junction temperature, the output changes by 41 micro-Volts. If you have a 32-bit ADC, what is the smallest temperature change you can detect if the ADC range is 10 V? Try leaving the answer as a decimal with significant digits: e.g., 0.00004100.arrow_forward1 (a) Using Townsend's second ionization criterion, consider I, 4 x 10-7 A. Consider a = 2.28/cm. If y = 0.0075, find the gap spacing dspark in cm for spark breakdown criterion. Calculate the current I in A for (i) d = 0.45 xdspark , (ii) d = 0.6 x dspark and (iii) d = 0.8 x dspark Show that the current I = Io exp (ad) when d is very small value and y is also very small value. 1,ead 1- y(ead – 1) (b) For a point-plane gaseous dielectric system, suppose values of a = 2.24 / cm and y = 0.0064. d Find the values of for d = 1.25 cm and d = 1.95 cm. ddarrow_forward
- The number of silicon atoms per m3 is 5 × 1028. This is doped simultaneously with 5 × 1022 atoms per m3 of Arsenic and 5 × 1020 per m3 atoms of Indium. Calculate the number of electrons and holes. Given that nI = 1.5 × 1016m–3. Is the material n-type or p-type?arrow_forward(a) What is the minimum donor doping required to convert silicon into a conductor based on the definitions in Table ? (b) What is the minimum acceptor doping required to convert silicon into a conductor?arrow_forwardWhat is the active area of the transistor if ∆ = 0.125 μm? Whatare the values of W and L for the transistor. What is the area of the transistor gate region?How many of these transistors could be packed together on a 10 mm × 10 mm integratedcircuit die if the active areas of the individual transistors must be spaced apart by a minimumof 4 ∆?arrow_forward
- A Si p- n junction with cross sectional area A= 0.01cm? is formed with N3=2x1017 cm3, Na= 1017cm3. Calculate: a) contact potential b) the depletion region width and c) the junction capacity at 0 and -2 Volts.arrow_forwardConsider spherical nanoparticles of copper with diameters of 10 and 100 nm. A) Calculate the total number of atoms in the particles,considering the lattice parameter of bulk Cu. B) Calculate the number of atoms at the grain boundaries for a typical grain boundary thickness of 1nm.arrow_forwardQ :- Find the mobilities, and resistivities of silicon samples at 300 K, for each of the following impurity concentrations: (a) 5 x 1015 boron atoms/cm³; (b) 2 x 1016 boron atoms/cm³ and 1.5 x 1016 arsenic atoms/cm³.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
University Physics Volume 3PhysicsISBN:9781938168185Author:William Moebs, Jeff SannyPublisher:OpenStax
University Physics Volume 3
Physics
ISBN:9781938168185
Author:William Moebs, Jeff Sanny
Publisher:OpenStax